2010. 6. 25 1/1 semiconductor technical data ktc9013 epitaxial planar npn transistor revision no : 2 general purpose application. switching application. features h excellent h fe linearity. h complementary to ktc9012. maximum rating (ta=25 ? ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c * 625 mw 400 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =1v, i c =50ma 64 - 246 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter voltage v be i c =100ma, v ce =1v 0.8 1.0 v transition frequency f t v cb =6v, i c =20ma, f=100mhz 140 - - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 7.0 - pf note : h fe classification d:64 q 91, e:78 q 112, f:96 q 135, g:118 q 166, h:144 q 202, i:176 q 246 * cu lead-frame : 625mw fe lead-frame : 400mw
2010. 6. 25 2/2 ktc9013 revision no : 2 0 1 100 0 500 0.5 2345 200 300 400 500 i =0.1ma 0.5 1.0 2.0 3.0 4.0 6.0 b common emitter ta=25 c 1 3 10 30 1k 100 300 10 30 50 100 300 common emitter ta =100 c ta =-25 c ta =25 c v =6v ce ce v =1v ta =100 c ta =25 c ta =-25 c ta =100 c ta =-25 c ta =25 c 1 0.5 0.5 1 3 10 30 1k 100 300 0.03 0.05 0.1 0.3 common emitter 100 5 0 0.2 0.4 0.6 0.8 1.0 1.2 10 30 50 300 500 1k 2k common v =6v ce emitter i /i =10 cb collector power dissipation p c (mw) 0 0 p c - ta 25 50 75 100 125 150 175 100 200 300 400 700 600 500 ambient temperature ta ( c) v ce(sat) - i c collector-emitter saturation voltage v ce(sat) (v) i c - v ce collector-emitter voltage v ce (v) collector current i c (ma) dc current gain h fe collector current i c (ma) collector current i c (ma) h fe - i c base current i b ( a) base-emitter voltage v be (v) i b - v be (low voltage region) cu fe
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